Giant magnetoresistance enhancement at room-temperature in organic spin valves based on La0.67Sr0.33MnO3 electrodes

被引:29
作者
Chen, B. B. [1 ]
Zhou, Y.
Wang, S.
Shi, Y. J.
Ding, H. F.
Wu, D.
机构
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
关键词
SEMICONDUCTORS; TRANSITION; INTERFACE; DEVICES; FILMS;
D O I
10.1063/1.4818614
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have systematically studied the magnetoresistance (MR) of Alq(3)-based organic spin valves using as-grown La0.67Sr0.33MnO3 (LSMO), annealed LSMO, and La0.67Ca0.33MnO3 as the bottom electrode. A giant enhancement of MR ratio (more than one order of magnitude) is observed when the optimal annealed LSMO is used, and the measured MR can be as high as 2.2% at room temperature. Below similar to 100 K, the temperature dependence of the normalized MR is almost identical with these three electrodes despite the strong difference in Curie temperature (from 250 K to 360 K). We attribute this similar MR temperature dependence to the spin relaxation in Alq(3). (C) 2013 AIP Publishing LLC.
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页数:4
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