Electron diffraction based techniques in scanning electron microscopy of bulk materials

被引:264
作者
Wilkinson, AJ
Hirsch, PB
机构
[1] Department of Materials, University of Oxford, Oxford OX1 3PH, Parks Road
关键词
scanning electron microscopy; electron channelling; electron backscatter diffraction;
D O I
10.1016/S0968-4328(97)00032-2
中图分类号
TH742 [显微镜];
学科分类号
摘要
The three scanning electron microscope diffraction based techniques of electron channelling patterns (ECPs), electron channelling contrast imaging (ECCI), and electron backscatter diffraction (EBSD) are reviewed. The dynamical diffraction theory is used to describe the physics of electron channelling, and hence the contrast observed in ECPs (and EBSD) and ECCI images of dislocations. Models for calculating channelling contrast are described and their limitations discussed. The practicalities of the experimental methods, including detector-specimen configurations, spatial resolution and sensitivities are given. Examples are given of the use of ECCI for imaging and characterising lattice defects, both individually and in groups, in semiconductor heterostructures and fatigued metals. Applications of the EBSD technique to orientation determination, phase identification and strain measurement are given and compared with use of ECPs. It is concluded that these techniques make the SEM a powerful instrument for characterising the local crystallography of bulk materials at the mesoscopic scale. (C) 1997 Elsevier Science Ltd.
引用
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页码:279 / 308
页数:30
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