Temperature dependence of the thermal properties of InSb materials used in data storage

The temperature evolution of several important thermal properties of crystalline InSb semiconductor is reported systematically. Results show that the specific heat and thermal expansion coefficient remain virtually unchanged upon heating, whereas the thermal diffusivity and thermal conductivity gradually decrease with increasing temperature. The thermal conductivities from phonons, electrons, and photon radiations are investigated, respectively. Analytical results indicate that thermal conductivity from phonons is dominant when the temperature is between 300 K and 800 K. The commonly used thermal parameters of Sb, Sb2Te3, and InSb at near room temperature are summarized. Compared with other Sb-based phase-change materials, such as Sb2Te3, InSb is markedly more thermally active, i.e., with much higher thermal conductivity. These thermal results offer useful information for the development of InSb-based devices. (C) 2013 AIP Publishing LLC.