Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process

被引：40

作者：

Chang, Kuan-Chang ^{[1
]}

Tsai, Tsung-Ming ^{[1
]}

Zhang, Rui ^{[2
]}

Chang, Ting-Chang ^{[3
,4
]}

Chen, Kai-Huang ^{[5
]}

Chen, Jung-Hui ^{[6
]}

Young, Tai-Fa ^{[7
]}

Lou, J. C. ^{[2
]}

Chu, Tian-Jian ^{[1
]}

Shih, Chih-Cheng ^{[6
]}

Pan, Jhih-Hong ^{[1
]}

Su, Yu-Ting ^{[3
]}

Syu, Yong-En ^{[3
]}

Tung, Cheng-Wei ^{[1
]}

Chen, Min-Chen ^{[3
]}

Wu, Jia-Jie ^{[8
]}

Hu, Ying ^{[8
]}

Sze, Simon M. ^{[9
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan

[2] Peking Univ, Sch Software & Microelect, Beijing 100871, Peoples R China

[3] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[4] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 700, Taiwan

[5] Tung Fang Design Univ, Dept Elect Engn & Comp Sci, Kaohsiung, Taiwan

[6] Natl Kaohsiung Normal Univ, Dept Chem, Kaohsiung, Taiwan

[7] Natl Sun Yat Sen Univ, Dept Mech & Electromech Engn, Kaohsiung 80424, Taiwan

[8] Xidian Univ, Sch Tech Phys, Xian, Shanxi, Peoples R China

[9] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 08期

关键词：

16;

D O I：

10.1063/1.4819162

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, the electrical conduction mechanism of Zn:SiOx resistance random access memory (RRAM) treated with supercritical CO2 fluid (SCCO2) process was investigated by low temperature measurement. The current of low resistance state for current-voltage curves in SCCO2-treated and untreated Zn:SiOx RRAM were measured and compared under a low temperature range from 100K to 298 K. The electrical conduction mechanisms of hopping conduction and metal-like behaviors in SCCO2-treated and untreated Zn:SiOx RRAM were discussed, respectively. Finally, the electrical conduction mechanism was analyzed and verified by the chemical composition and bonding intensity of XPS analyses. (C) 2013 AIP Publishing LLC.

引用

页数：3

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