Domain growth dynamics in PMN-PT ferroelectric thin films

被引：4

作者：

Pan, Jiayu ^{[1
,2
]}

Men, Tianlu ^{[1
]}

Xu, Xingyu ^{[1
]}

Xu, Ze ^{[1
]}

Li, Qi ^{[1
]}

Chu, Xiang-Cheng ^{[1
]}

Shen, Yang ^{[1
]}

Han, Bing ^{[3
,4
,5
]}

Wang, Ke ^{[1
]}

机构：

[1] Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China

[2] Inst Flexible Elect Technol THU, Jiaxing 314006, Zhejiang, Peoples R China

[3] Peking Univ, Sch & Hosp Stomatol, Dept Orthodont, Beijing 100081, Peoples R China

[4] Natl Engn Lab Digital & Mat Technol Stomatol, Beijing 100081, Peoples R China

[5] Beijing Key Lab Digital Stomatol, Beijing 100081, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE | 2019年 / 54卷 / 15期

关键词：

FORCE MICROSCOPY; POLARIZATION; NANOSCALE; DEPENDENCE; CRYSTALS; VOLTAGE; WALLS; SIZE;

D O I：

10.1007/s10853-019-03563-z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PMN-PT) ferroelectric thin films have been widely used in many areas due to the outstanding piezoelectric and electromechanical properties. Although many studies have been operated on the properties and applications of PMN-PT films, few researches focused on the domain growth dynamics of these materials. In this paper, the domain growth dynamics of PMN-PT thin films were investigated using piezoelectric force microscopy. The shape and the size of the artificial domains were imaged and calculated to depict the relationship between the imposed pulse voltage and the domain behaviors. A linear relationship between the pulse voltage and the domain size could be obtained before the saturation of polarization. Meanwhile, the domain size and the duration show the logarithmic relationship, and such domain growth dynamics were explained according to previous theories.

引用

页码：10600 / 10608

页数：9

共 50 条

[41] PMN-PT ferroelectric relaxor crystal and its ultrasonic transducer
Li, GR
Luo, HS
Yin, QR
JOURNAL OF INORGANIC MATERIALS, 2001, 16 (06) : 1077 - 1083
[42] Ferroelectric SrMnO3 Thin Film Grown on (110)-Oriented PMN-PT Substrate
Park, Seong Min
Kim, Jaegyu
Anoop, Gopinathan
Seol, WooJun
Lee, Su Yong
Joh, Hyunjin
Kim, Tae Yeon
Choi, Je Oh
Hong, Seungbum
Yang, Chan-Ho
Lee, Hyeon Jun
Jo, Ji Young
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2024, 18 (08):
[43] Composition control and electrical properties of PMN-PT thin films around the morphotropic boundary
Wang, J
Wong, KH
Chan, HLW
Choy, CL
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 79 (03): : 551 - 556
[44] Preparation of PMN-PT films by laser ablation method
Matsumuro, Y
Oishi, Y
Wu, WB
Okuyama, M
INTEGRATED FERROELECTRICS, 1998, 20 (1-4) : 95 - 105
[45] PMN-PT ceramics
不详
AMERICAN CERAMIC SOCIETY BULLETIN, 2004, 83 (08): : 4 - 4
[46] Annealing temperature effects on PMN-PT thin film
Detalle, M.
Wang, G. S.
Fribourg-Blanc, E.
Remiens, D.
FERROELECTRICS, 2008, 362 : 128 - 136
[47] Effect of a thin (doped) PZT interfacial layer on the properties of epitaxial PMN-PT films
Boota, Muhammad
Houwman, Evert P.
Lanzara, Giulia
Rijnders, Guus
JOURNAL OF APPLIED PHYSICS, 2020, 128 (05)
[48] Modelling of relaxor-ferroelectric behaviour of PMN-PT and PMN-PZ ceramics
Tiwari, VS
Singh, G
Wadhawan, VK
FERROELECTRICS, 2002, 281 : 87 - 95
[49] Integration, electrical and electromechanical properties of PZT and PMN-PT thin films for MEMS applications
Kügeler, C
Hoffmann, M
Böttger, U
Waser, R
SMART STRUCTURES AND MATERIALS 2002: ACTIVE MATERIALS: BEHAVIOR AND MECHANICS, 2002, 4699 : 114 - 123
[50] Composition control and electrical properties of PMN-PT thin films around the morphotropic boundary
J. Wang
K.H. Wong
H.L.W. Chan
C.L. Choy
Applied Physics A, 2004, 79 : 551 - 556

← 1 2 3 4 5 →