Domain growth dynamics in PMN-PT ferroelectric thin films

被引：4
|
作者：
Pan, Jiayu [1 ,2 ]
Men, Tianlu [1 ]
Xu, Xingyu [1 ]
Xu, Ze [1 ]
Li, Qi [1 ]
Chu, Xiang-Cheng [1 ]
Shen, Yang [1 ]
Han, Bing [3 ,4 ,5 ]
Wang, Ke [1 ]
机构：
[1] Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
[2] Inst Flexible Elect Technol THU, Jiaxing 314006, Zhejiang, Peoples R China
[3] Peking Univ, Sch & Hosp Stomatol, Dept Orthodont, Beijing 100081, Peoples R China
[4] Natl Engn Lab Digital & Mat Technol Stomatol, Beijing 100081, Peoples R China
[5] Beijing Key Lab Digital Stomatol, Beijing 100081, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE | 2019年 / 54卷 / 15期
关键词：
FORCE MICROSCOPY; POLARIZATION; NANOSCALE; DEPENDENCE; CRYSTALS; VOLTAGE; WALLS; SIZE;
D O I：
10.1007/s10853-019-03563-z
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PMN-PT) ferroelectric thin films have been widely used in many areas due to the outstanding piezoelectric and electromechanical properties. Although many studies have been operated on the properties and applications of PMN-PT films, few researches focused on the domain growth dynamics of these materials. In this paper, the domain growth dynamics of PMN-PT thin films were investigated using piezoelectric force microscopy. The shape and the size of the artificial domains were imaged and calculated to depict the relationship between the imposed pulse voltage and the domain behaviors. A linear relationship between the pulse voltage and the domain size could be obtained before the saturation of polarization. Meanwhile, the domain size and the duration show the logarithmic relationship, and such domain growth dynamics were explained according to previous theories.
引用
收藏
页码：10600 / 10608
页数：9
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