Improving simultaneous of crystallization and Ga homogenization in Cu(In, Ga)Se2 film using an evaporated In film

被引：9

作者：

Lin, Yi-Cheng ^{[1
]}

Yao, Xu-Jing ^{[1
]}

Wang, Li-Ching ^{[1
]}

Ting, Jyh-Ming ^{[2
]}

机构：

[1] Natl Changhua Univ Educ, Dept Mechatron Engn, Changhua, Taiwan

[2] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2013年 / 572卷

关键词：

CIGS solar cells; Absorber layer; Grain growth; Ga distribution; SOLAR-CELLS; THIN-FILMS; SELENIZATION; CU(IN; GA)SE-2; DEVICE; PRECURSORS;

D O I：

10.1016/j.jallcom.2013.03.257

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report an improving simultaneous of crystallization and Ga homogenization method of Cu(In, Ga)Se-2(-CIGS) layer by evaporated In film in cell structure of glass/Mo/Cu-In-Ga/CdS/i-ZnO/AZO/Al. Results demonstrate that the evaporated In structure is superior to conventional sputtered In structure for its ability to produce a CIGS film with better crystallization, superior structural characteristics, reduced surface roughness, and more homogeneous distribution of elemental Ga. The device conversion efficiency using the evaporated In structure was found to increase by about 29% from 6.0% to 8.5% beyond what is possible using conventional sputtering In structure. (c) 2013 Elsevier B.V. All rights reserved.

引用

页码：31 / 36

页数：6

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