Atomic layer deposition of zirconium dioxide from zirconium tetrachloride and ozone

被引：24
|
作者：
Kukli, Kaupo [1 ]
Kemell, Marianna [1 ]
Koykka, Joel [1 ]
Mizohata, Kenichiro [2 ]
Vehkamaki, Marko [1 ]
Ritala, Mikko [1 ]
Leskela, Markku [1 ]
机构：
[1] Univ Helsinki, Dept Chem, FI-00014 Helsinki, Finland
[2] Univ Helsinki, Dept Phys, Accelerator Lab, FI-00014 Helsinki, Finland
来源：
THIN SOLID FILMS | 2015年 / 589卷
基金：
芬兰科学院;
关键词：
Atomic layer deposition; Zirconium oxide; Dielectrics; Metal oxides; Crystal growth; KAPPA GATE DIELECTRICS; ZRO2; THIN-FILMS; ELECTRICAL-PROPERTIES; LOW-TEMPERATURE; OXIDE; IMPACT; TIO2; PERFORMANCE; DEFECTS;
D O I：
10.1016/j.tsf.2015.06.033
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZrO2 films were grown by atomic layer deposition using ZrCl4 and O-3 as precursors. The films were grown on silicon substrates in the temperature range of 220-500 degrees C. The ALD rate was monotonously decreasing from 0.085 to 0.060 nm/cycle in this temperature range towards the highest temperatures studied. The content of chlorine in the films did not exceed 0.2 at.% as measured by elastic recoil detection analysis. The content of hydrogen was 0.30 and 0.14 at.% in the films grown at 300 and 400 degrees C, respectively. Structural studies revealed the films consisting of mixtures of stable monoclinic and metastable tetragonal/cubic polymorphs of ZrO2, and dominantly metastable phases of ZrO2 below and above 300 degrees C, respectively. Permittivity of dielectric layers in Al/Ti/ZrO2/(TiN/)Si capacitors with 15-40 nm thick ZrO2 ranged between 12 and 25 at 100 kHz and the dielectric breakdown fields were in the range of 1.5-3.0 MV/cm. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：597 / 604
页数：8
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