Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

被引：99

作者：

Hua, Mengyuan ^{[1
]}

Liu, Cheng ^{[1
]}

Yang, Shu ^{[1
]}

Liu, Shenghou ^{[1
]}

Fu, Kai ^{[2
]}

Dong, Zhihua ^{[2
]}

Cai, Yong ^{[2
]}

Zhang, Baoshun ^{[2
]}

Chen, Kevin J. ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 10期

关键词：

Gallium nitride; gate dielectric; low-pressure chemical vapor deposition (LPCVD); silicon nitride; SILICON-NITRIDE; CONDUCTION MECHANISM; POOLE-FRENKEL; BREAKDOWN; TRANSPORT; VOLTAGE; MODELS;

D O I：

10.1109/TED.2015.2469716

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we systematically investigated the leakage and breakdown mechanisms of the low-pressure chemical vapor deposition (LPCVD) silicon nitride thin film deposited on AlGaN/GaN heterostructures. The LPCVD-SiNx gate dielectric exhibits low leakage and high breakdown electric field. The dominant mechanism of the leakage current through LPCVD-SiNx gate dielectric is identified to be Poole-Frenkel emission at low electric field and Fowler-Nordheim tunneling at high electric field. Both electric-field-accelerated and temperature-accelerated time-dependent dielectric breakdown of the LPCVD-SiNx gate dielectric were also investigated.

引用

页码：3215 / 3222

页数：8

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