GaN crystallization by the high-pressure solution growth method on HVPE bulk seed

被引：28

作者：

Bockowski, M. ^{[1
]}

Strak, P. ^{[2
]}

Grzegory, I. ^{[1
]}

Lucznik, B. ^{[1
]}

Porowski, S. ^{[1
]}

机构：

[1] Inst High Pressure Phys PAS, PL-01142 Warsaw, Poland

[2] Warsaw Univ Technol, Fac Phys, PL-00672 Warsaw, Poland

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 17期

关键词：

high-pressure growth from solution; seeded growth; gallium nitride;

D O I：

10.1016/j.jcrysgro.2008.06.030

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Recent results of the bulk GaN crystallization by the high-pressure solution (HPS) growth method are presented. The new experimental configurations for seeded growth on HVPE free-standing GaN crystals are proposed. The growth rate, Morphology and basic physical properties of the pressure-grown materials are reported. The finite element Calculation is used for modeling the convective transport in the Solution. The convectional flow velocity vectors in liquid gallium are determined from experimentally measured temperatures and by solving the set of Navier-Stokes equations. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：3924 / 3933

页数：10

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