Initiation of high power microwave dielectric interface breakdown

被引:94
作者
Neuber, A [1 ]
Hemmert, D
Krompholz, H
Hatfield, L
Kristiansen, M
机构
[1] Texas Tech Univ, Dept Elect Engn, Lubbock, TX 79409 USA
[2] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA
关键词
D O I
10.1063/1.370953
中图分类号
O59 [应用物理学];
学科分类号
摘要
A simple model of vacuum/dielectric/vacuum interface breakdown initiation caused by high power microwave has been developed. In contrast to already existing models, a spatially varying electron density normal to the interface surface has been introduced. Geometry and parameter ranges have been chosen close to the conditions of previously carried out experiments. Hence, physical mechanisms have become identifiable through a comparison with the already known experimental results. It is revealed that the magnetic field component of the microwave plays an important role. The directional dependence introduced by the magnetic field leads to a 25% higher positive surface charge buildup for breakdown at the interface downstream side as compared to the upstream side. This and the fact that electrons are, in the underlying geometry, generally pulled downstream favors the development of a saturated secondary electron avalanche or a saturated multipactor at the upstream side of the dielectric interface. The previously observed emission of low energy x-ray radiation from the interface is explained by bremsstrahlung generated by impacting electrons having initially a higher energy than the average emission energy. Final breakdown is believed to be triggered by electron induced outgassing or evaporation, generating a considerable gas density above the dielectric surface and eventually leading to a gaseous breakdown. (C) 1999 American Institute of Physics. [S0021-8979(99)09315-9].
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收藏
页码:1724 / 1728
页数:5
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