A study of the wet etching behavior of CoNbZr/Cu/CoNbZr multi-layer films formed by RF magnetron sputtering

被引:0
|
作者
Yoon, JH [1 ]
Song, JS [1 ]
Mitton, B [1 ]
Latanision, R [1 ]
Kim, HS [1 ]
机构
[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
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中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
CoNbZr/Cu/CoNbZr multi-layer films were produced by RF magnetron sputtering and patterns were formed on the deposited multi-layer films. During this study, a new etchant was developed to produce a pattern by wet etching and the best etchant composition and conditions were thoroughly investigated. It was determined that Cu was etched selectively independent of the concentration of iron chloride solution. Excellent etching characteristics were observed, however, when a mixed solution of iron chloride (17.5 mol%) and HF (20 mol%) was employed.
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页码:671 / 679
页数:9
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