Graphene-SiO2 Interaction from Composites to Doping

被引:5
作者
Armano, Angelo [1 ,2 ]
Buscarino, Gianpiero [1 ]
Cannas, Marco [1 ]
Gelardi, Franco Mario [1 ]
Giannazzo, Filippo [3 ]
Schiliro, Emanuela [3 ]
Lo Nigro, Raffaella [3 ]
Agnello, Simonpietro [1 ,4 ]
机构
[1] Univ Palermo, Dept Chem & Phys, Via Archirafi 36, I-90123 Palermo, Italy
[2] Univ Catania, Dept Phys & Astron, Via Santa Sofia 64, I-95123 Catania, Italy
[3] CNR, IMM, Str 8 5, I-95121 Catania, Italy
[4] Univ Palermo, AteN Ctr, Viale Sci,Ed 18, I-90128 Palermo, Italy
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2019年 / 216卷 / 03期
关键词
doping; graphene; silica; strain; CHEMICAL-VAPOR-DEPOSITION; LOCAL ANODIC-OXIDATION; RAMAN-SPECTROSCOPY; MONOLAYER GRAPHENE; DOPED GRAPHENE; ELECTRONIC-PROPERTIES; THERMAL TREATMENTS; LAYER GRAPHENE; SUBSTRATE; OXYGEN;
D O I
10.1002/pssa.201800540
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An overview of the interaction between monolayer graphene and SiO2 dielectric substrate is reported focusing on the effect this latter has on doping and strain induced by thermal treatments in controlled atmosphere. The disentanglement of strain and doping is highlighted and the comparison with another dielectric substrate of Al2O3 evidences the critical role that the substrate has in the electronic properties of graphene. The reported results pave the way for microelectronic devices based on graphene on dielectrics and for Fermi level tuning in composites of graphene and nanoparticles.
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页数:11
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