Thermoelectric properties of Ni-doped CuInTe2

被引:34
作者
Kucek, V. [1 ]
Drasar, C. [1 ]
Navratil, J. [2 ]
Plechacek, T. [1 ]
Benes, L. [1 ]
机构
[1] Univ Pardubice, Fac Chem Technol, Pardubice 53210, Czech Republic
[2] Acad Sci Czech Republic, Inst Macromol Chem, Prague 12006, Czech Republic
关键词
Semiconductors; Chalcogenides; X-ray diffraction; Transport properties; CHALCOPYRITE; CUINSE2; EFFICIENCY; SYSTEM;
D O I
10.1016/j.jpcs.2015.03.012
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Polycrystalline samples of composition Cu1-xNixInTe2 (for x=0-0.05) were synthesized from elements of 5 N purity using a solid-state reaction. The phase purity of the products was verified by X-ray diffraction. Samples for measurement of the transport properties were prepared using hot-pressing. The samples were then characterized by the measurement of electrical conductivity, the Hall coefficient, the Seebeck coefficient, and the thermal conductivity over a temperature range of 300-675 K. All of the samples demonstrate p-type conductivity. We discuss the influence of Ni substitution on the free carrier concentration and the thermoelectric performance. The investigation of the thermoelectric properties shows an improvement up to 50% of Zr in the temperature range of 300-600 K. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:18 / 23
页数:6
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