Transition from planar to island growth mode in SiGe structures fabricated on SiGe/Si(001) strain-relaxed buffers

被引：5

作者：

Shaleev, M. V. ^{[1
]}

Novikov, A. V. ^{[1
]}

Yurasov, D. V. ^{[1
]}

Hartmann, J. M. ^{[2
]}

Kuznetsov, O. A. ^{[3
]}

Lobanov, D. N. ^{[1
]}

Krasilnik, Z. F. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[2] CEA, LETI, F-38054 Grenoble 9, France

[3] Nizhnii Novgorod State Univ, Tech Phys Res Inst, Nizhnii Novgorod 603950, Russia

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 15期

关键词：

SI/SIGE HETEROSTRUCTURES; SURFACE-ROUGHNESS; GE; LAYER; SI1-XGEX; PHOTOLUMINESCENCE; DEPOSITION; SUBLAYERS; DOTS;

D O I：

10.1063/1.4758486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The specifics of the two-to-three dimensional growth mode transition of pure Ge on SiGe/Si(001) strain-relaxed buffers (SRBs) were investigated. It was shown that the critical thickness for elastic relaxation is influenced not only by the lattice mismatch between the substrate and the film but also by Ge segregation and surface roughness dependent on parameters of strained layers. Critical thickness was found to be smaller for Ge grown on SiGe strain-relaxed buffers than on pure Si(001) substrates, in spite of the lesser lattice mismatch. Insertion of thin tensile-strained Si layers between Ge and SiGe strain-relaxed buffers increased the critical thickness. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4758486]

引用

页数：4

共 30 条

[1] SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy [J].

Bogumilowicz, Y ;

Hartmann, JM ;

Cherkashin, N ;

Claverie, A ;

Rolland, G ;

Billon, T .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 124 :113-117

[2] Surface segregation of Ge at SiGe(001) by concerted exchange pathways [J].

Boguslawski, P ;

Bernholc, J .

PHYSICAL REVIEW LETTERS, 2002, 88 (16) :4-166101

[3] Si/Ge nanostructures [J].

Brunner, K .

REPORTS ON PROGRESS IN PHYSICS, 2002, 65 (01) :27-72

[4] Genetic-Algorithm Discovery of a Direct-Gap and Optically Allowed Superstructure from Indirect-Gap Si and Ge Semiconductors [J].

d'Avezac, Mayeul ;

Luo, Jun-Wei ;

Chanier, Thomas ;

Zunger, Alex .

PHYSICAL REVIEW LETTERS, 2012, 108 (02)

[5] Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition [J].

Diehl, L ;

Mentese, S ;

Müller, E ;

Grützmacher, D ;

Sigg, H ;

Gennser, U ;

Sagnes, I ;

Campidelli, Y ;

Kermarrec, O ;

Bensahel, D ;

Faist, J .

APPLIED PHYSICS LETTERS, 2002, 81 (25) :4700-4702

[6] Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers [J].

Drozdov, Yu. N. ;

Novikov, A. V. ;

Shaleev, M. V. ;

Yurasov, D. V. .

SEMICONDUCTORS, 2010, 44 (04) :519-524

[7] Influence of Elastic Strains in Sublayers on the Critical Thickness of the Stranski-Krastanow Transition for the GeSi/Si(001) System [J].

Drozdov, Yu. N. ;

Lobanov, D. N. ;

Nikiforov, A. I. ;

Novikov, A. V. ;

Ul'yanov, V. V. ;

Yurasov, D. V. .

JOURNAL OF SURFACE INVESTIGATION, 2009, 3 (04) :548-553

[8] Improved hole mobilities and thermal stability in a strained-Si/strained-Si1-yGey/strained-Si heterostructure grown on a relaxed Si1-xGex buffer -: art. no. 192104 [J].

Gupta, S ;

Lee, ML ;

Fitzgerald, EA .

APPLIED PHYSICS LETTERS, 2005, 86 (19) :1-3

[9] Degradation-robust single mode continuous wave operation of 1.46 μm metamorphic quantum dot lasers on GaAs substrate [J].

Kettler, T. ;

Karachinsky, L. Ya. ;

Ledentsov, N. N. ;

Shchukin, V. A. ;

Fiol, G. ;

Kuntz, M. ;

Lochmann, A. ;

Schulz, O. ;

Reissmann, L. ;

Posilovic, K. ;

Bimberg, D. ;

Novikov, I. I. ;

Shernyakov, Yu. M. ;

Gordeev, N. Yu. ;

Maximov, M. V. ;

Kryzhanovskaya, N. V. ;

Zhukov, A. E. ;

Semenova, E. S. ;

Vasil'ev, A. P. ;

Ustinov, V. M. ;

Kovsh, A. R. .

APPLIED PHYSICS LETTERS, 2006, 89 (04)

[10] High-quality metamorphic compositionally graded InGaAs buffers [J].

Lee, Kenneth E. ;

Fitzgerald, Eugene A. .

JOURNAL OF CRYSTAL GROWTH, 2010, 312 (02) :250-257

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