Controlled growth of quantum dots on mesa top

For ridge-shaped GaAs mesas grown by selective area epitaxy in the oxide opening of the patterned substrate, the width of the mesa top can be controlled by growing a calculated thickness of the GaAs. InAs can then be selectively grown on the mesa top to obtain well defined rows of self-organized quantum dots. The shape of the oxide opening is tailored in this study to achieve the desired dot distributions along the length of a ridge. The results show individual row control of the dots which makes possible the design of novel device structures. (C) 1999 Elsevier Science B.V. All rights reserved.