共 50 条
Multifunctional black phosphorus/MoS2 van der Waals heterojunction
被引:25
|作者:
Jiang, Xixi
[1
]
Zhang, Min
[1
]
Liu, Liwei
[1
]
Shi, Xinyao
[3
]
Yang, Yafen
[1
]
Zhang, Kai
[3
]
Zhu, Hao
[1
]
Chen, Lin
[1
]
Liu, Xinke
[2
]
Sun, Qingqing
[1
]
Zhang, David Wei
[1
]
机构:
[1] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
[2] Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen 518060, Peoples R China
[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215123, Peoples R China
基金:
中国国家自然科学基金;
关键词:
MoS2;
black phosphorus;
heterojunction;
diode;
photodetector;
ternary inverter;
PHOTODETECTION;
TRANSISTOR;
TRANSITION;
D O I:
10.1515/nanoph-2019-0549
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
The fast-developing information technology has imposed an urgent need for effective solutions to overcome the limitations of integration density in chips with smaller size but higher performance. van der Waals heterojunctions built with two-dimensional (2D) semiconductors have been widely studied due to their 2D nature, and their unique electrical and photoelectronic properties are quite attractive in realizing multifunctional devices toward multitask applications. In this work, black phosphorus (BP)/MoS2 heterojunctions have been used to build electronic devices with various functionalities. A p-n diode is achieved based on the vertically stacked BP/MoS2 heterojunction exhibiting an ideal factor of 1.59, whereas a laterally stacked BP/MoS2 heterojunction is implemented to fabricate a photodetector that shows a photodetection responsivity of 2000 mA/W at a wavelength of 1300 nm. Furthermore, a ternary inverter has been realized using a BP field-effect transistor in-series with a lateral BP/MoS2 heterojunction. Such results have unambiguously demonstrated the superiority of BP/MoS2 heterojunction in realizing multiple functionalities and have offered a new pathway for the design and engineering of future circuitry and device integration based on novel 2D semiconductors.
引用
收藏
页码:2487 / 2493
页数:7
相关论文