Mechanics of direct wafer bonding

被引:22
|
作者
Turner, KT [1 ]
Spearing, SM [1 ]
机构
[1] MIT, Cambridge, MA 02139 USA
来源
PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 2006年 / 462卷 / 2065期
关键词
wafer bonding; adhesion; surface forces; JKR;
D O I
10.1098/rspa.2005.1571
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Direct wafer bonding is a manufacturing process that is used in the fabrication of electronic, optical and mechanical microsystems. The initial step in the process requires that the wafers are sufficiently smooth, flat and compliant such that short-range surface forces can elastically deform the wafers and bring the surfaces into complete contact. Analytical and computational mechanics models of this adhesion process as well as experiments that validate these models are presented in this work. An energy-based analysis is used to develop the models that allow acceptable limits of wafer-scale flatness variations to be predicted. The analytical models provide basic insight into the process while the finite-element-based model reported provides a method to analyse a broad range of realistic cases, including the bonding of wafers with etch patterns and arbitrary geometries. Experiments, in which patterned silicon wafers with different magnitudes of Wafer-scale shape variations were bonded, were performed and the results demonstrate that the proposed models can accurately predict; the size and shape of the bonded area based on the wafer geometry, elastic properties and work of adhesion.
引用
收藏
页码:171 / 188
页数:18
相关论文
共 50 条
  • [31] ATOMIC LEVEL INP/SI WAFER-SCALE DIRECT BONDING IN LOW TEMPERATURE
    Zhang, Xuan Xiong
    2017 PAN PACIFIC MICROELECTRONICS SYMPOSIUM (PAN PACIFIC), 2017,
  • [32] Wafer bonding in silicon electronics
    Reiche, Manfred
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 3, 2009, 6 (03): : 633 - 644
  • [33] Wafer bonding for microsystems technologies
    Gösele, U
    Tong, QY
    Schumacher, A
    Kräuter, G
    Reiche, M
    Plössl, A
    Kopperschmidt, P
    Lee, TH
    Kim, WJ
    SENSORS AND ACTUATORS A-PHYSICAL, 1999, 74 (1-3) : 161 - 168
  • [34] BCB wafer bonding for microfluidics
    Hwang, TJ
    Popa, D
    Sin, J
    Stephanou, HE
    Leonard, EM
    MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY IX, 2004, 5342 : 182 - 191
  • [35] Angular alignment for wafer bonding
    Chou, YF
    Hsieh, MS
    MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY II, 1996, 2879 : 291 - 297
  • [36] Wafer bonding techniques for MEMS
    Miki, N
    SENSOR LETTERS, 2005, 3 (04) : 263 - 273
  • [37] Wafer bonding with an adhesive coating
    Klink, G
    Hillerich, B
    MICROMACHINED DEVICES AND COMPONENTS IV, 1998, 3514 : 50 - 61
  • [38] Wafer bonding for integrated materials
    Tong, QY
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 87 (03): : 323 - 328
  • [39] Germanium on sapphire by wafer bonding
    Baine, P. T.
    Gamble, H. S.
    Armstrong, B. M.
    McNeill, D. W.
    Mitchell, S. J. N.
    Low, Y. H.
    Rainey, P. V.
    SOLID-STATE ELECTRONICS, 2008, 52 (12) : 1840 - 1844
  • [40] Low-Temperature III-V Direct Wafer Bonding Surface Preparation Using a UV-Sulfur Process
    Jackson, Michael J.
    Chen, Li-Min
    Kumar, Ankit
    Yang, Yang
    Goorsky, Mark S.
    JOURNAL OF ELECTRONIC MATERIALS, 2011, 40 (01) : 1 - 5