Vertical Light-Emitting Diode Fabrication by Controlled Spalling

被引：24

作者：

Bedell, Stephen W. ^{[1
]}

Bayram, Can ^{[1
]}

Fogel, Keith ^{[1
]}

Lauro, Paul ^{[1
]}

Kiser, Jonathan ^{[1
]}

Ott, John ^{[1
]}

Zhu, Yu ^{[1
]}

Sadana, Devendra ^{[1
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 11期

关键词：

GAN THIN-FILMS; EFFICIENCY; SUBSTRATE; CRACKING;

D O I：

10.7567/APEX.6.112301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A fracture-based layer transfer technique referred to as controlled spalling was used to separate a conventional InGaN/GaN multiple quantum well light-emitting diode (LED) structure from a 50 mm sapphire wafer enabling the formation of vertical spalled LEDs (SLEDs). A 25-mu m-thick tensile Ni layer was electrodeposited on the surface of the wafer, followed by the application of a polyimide tape layer. By mechanically guiding the tape layer, a 3-mu m-thick layer of the LED epitaxy was removed. Transmission electron microscopy imaging indicated that spalling preserved the quality of the epitaxial layers, and electroluminescence verifies the operation of the SLED. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

共 20 条

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