Selective ion-induced grain growth: Thermal spike modeling and its experimental validation

被引：11
作者：
Seita, Matteo [1 ]
Schaeublin, Robin [2 ]
Doebeli, Max [3 ]
Spolenak, Ralph [1 ]
机构：
[1] ETH, Dept Mat, Lab Nanomet, CH-8093 Zurich, Switzerland
[2] EPFL, Ctr Rech Phys Plasmas, Assoc Euratom Confederat Suisse, CH-5232 Villigen, Switzerland
[3] ETH, Dept Phys, Lab Ion Beam Phys, CH-8093 Zurich, Switzerland
来源：
ACTA MATERIALIA | 2013年 / 61卷 / 16期
基金：
瑞士国家科学基金会;
关键词：
Theory and modeling; Ion irradiation; Grain growth; Texture;
D O I：
10.1016/j.actamat.2013.06.056
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ion-bombardment-induced selective grain growth is a process that allows for full control of the orientation of vapor-deposited thin films, which can be converted from fiber-textured polycrystalline to single-crystal films. The main mechanisms behind this phenomenon are explained by a new thermal spike model, which takes into account and compares the different driving forces governing the film microstructure evolution upon irradiation and emphasizes the importance of the thermal spike shape and volume. The strong agreement between model and experimental data confirms that selective grain growth is driven by the minimization of the volume free energy. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：6171 / 6177
页数：7
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