Application of solid immersion lens to submicron resolution imaging of nano-scale quantum wells

被引：5

作者：

Baba, M ^{[1
]}

Yoshita, M ^{[1
]}

Sasaki, T ^{[1
]}

Akiyama, H ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Minato Ku, Tokyo 1068666, Japan

来源：

OPTICAL REVIEW | 1999年 / 6卷 / 03期

关键词：

solid immersion lens; submicron resolution imaging; nano-scale quantum wells; near-field optics; spherical aberration; spatial resolution;

D O I：

10.1007/s10043-999-0257-3

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have discussed the resolution of submicron photoluminescence (PL) imaging using a solid immersion lens (SIL), which collects an evanescent light field. We apply the SIL microscope to measure PL image of a strip-line-patterned GaAs quantum well structure at low temperature. An improved resolution beyond diffraction limit and high collection efficiency of PL are realized.

引用

页码：257 / 260

页数：4

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