High Threshold Voltage p-GaN Gate Power Devices on 200 mm Si

被引：0

作者：

Kim, Jongseob ^{[1
]}

Hwang, Sun-Kyu ^{[1
]}

Hwang, Injun ^{[1
]}

Choi, Hyoji ^{[1
]}

Chong, Soogine ^{[1
]}

Choi, Hyun-Sik ^{[1
]}

Jeon, Woochul ^{[1
]}

Choi, Hyuk Soon ^{[1
]}

Kim, Jun Yong ^{[1
]}

Park, Young Hwan ^{[1
]}

Kim, Kyung Yeon ^{[1
]}

Park, Jong-Bong ^{[1
]}

Ha, Jong-Bong ^{[1
]}

Park, Ki Yeol ^{[1
]}

Oh, Jaejoon ^{[1
]}

Shin, Jai Kwang ^{[1
]}

Chung, U-In ^{[1
]}

Yoo, In-Kyeong ^{[1
]}

Kim, Kinam ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Samsung Adv Inst Technol, Yongin 446712, Gyeonggi Do, South Korea

来源：

2013 25TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2013年

关键词：

HEMTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present high threshold voltage, low on-resistance, and high speed GaN-HEMT devices using a p-GaN layer in the gate stack. There are three novel features - first, for the first time, p-GaN gate HEMTs were fabricated on a 200-mm GaN on Si substrate using a Au-free fully CMOScompatible process. Second, good electrical characteristics, including a threshold voltage of higher than 2.8 V, a low gate leakage current, no hysteresis, and fast switching, were obtained by employing a p-GaN and W gate stack. Finally, TO-220 packaged p-GaN gate HEMT devices, which can sustain a gate bias of up to 20 V, were demonstrated. Such properties indicate that our p-GaN HEMT devices are compatible with the conventional gate drivers for Si power devices.

引用

页码：315 / 318

页数：4

共 8 条

[1]

Hilt O, 2010, PROC INT SYMP POWER, P347

[2] p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current [J].