Mg-doping of GaAs thin films grown by MBE

被引:0
|
作者
Limborco, H. [1 ]
Moreira, M. V. B. [1 ]
Matinaga, F. M. [1 ]
de Oliveira, A. G. [1 ]
Gonzalez, J. C. [1 ]
机构
[1] Univ Fed Minas Gerais, ICEX, Dept Fis, BR-31270901 Belo Horizonte, MG, Brazil
来源
2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO) | 2016年
关键词
P-type doping; Molecular Beam Epitaxy; Photoluminescense; GaAs; Thin Films; MOLECULAR-BEAM EPITAXY; INAS QUANTUM DOTS; DOPED GAAS; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; MULTILAYERS; LAYERS; TEMPERATURE; NANOWIRES;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The influence of the growth conditions in the incorporation of Mg dopant atoms during the growth of GaAs thin films using two different substrate orientations was investigated electrically by Hall effect measurements and by Photoluminescence spectroscopy. Mg-doped GaAs thin films were successfully grown by molecular beam epitaxy with free carrier concentration varying between similar to 10(16) cm(-3) to similar to 10(19) cm(-3). The wide doping range obtained is suitable to fabricate a great variety of optoelectronic devices. The analysis of the incorporation of Mg atoms for several growth temperatures established two values for the thermal desorption activation energy E-D of Mg atoms in the GaAs surface, nominally E-D(111) = (1.94 +/- 0.14) eV for the (111)B samples and E-D(100) = (1.11 +/- 0.16) eV for the (100). Two very close bands were observed in the PL emission of the samples and identified as the electron-Mg acceptor level (e-A) transition, at approximately 1.49 eV, and the donor-to-Mg acceptor level (D-A) transition, at approximately 1.48 eV. At high doping levels a red shift of the e-A and D-A transitions was observed for the (111)B thin films, effect that are related to many-body interactions as the doping level increases.
引用
收藏
页数:4
相关论文
共 50 条
  • [21] OUTDIFFUSION OF MN INTO GAAS FILMS GROWN ON SEMIINSULATING GAAS SUBSTRATES BY MBE
    DUNG, PT
    LAZNICKA, M
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1985, 92 (02): : K113 - K116
  • [22] Doping of (111)B GaAs Thin Films Grown by Molecular Beam Epitaxy
    Limborco, H.
    Matinaga, F. M.
    da Silva, M. I. N.
    de Melo, O.
    Viana, E. R.
    Leitao, J. P.
    Moreira, M. V. B.
    Ribeiro, G. M.
    de Oliveira, A. G.
    Gonzalez, J. C.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 123 (20): : 12807 - 12812
  • [23] Epitaxial characteristics of MBE-grown ZnTe thin films on GaAs (211)B substrates
    Ozceri, Elif
    Tarhan, Enver
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2019, 125 (11):
  • [24] Epitaxial characteristics of MBE-grown ZnTe thin films on GaAs (211)B substrates
    Elif Ozceri
    Enver Tarhan
    Applied Physics A, 2019, 125
  • [25] THE EFFECTS OF INDIUM DOPING ON THE M AND EL LEVELS IN GAAS GROWN BY MBE
    HADJIPANTELI, S
    ILIADIS, AA
    PELLEGRINO, J
    COMAS, J
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 42 - 43
  • [26] Doping characteristics of GaAs0.5Sb0.5 grown by MBE
    Katayama, Takahiro
    Kawamura, Yuichi
    Yamamoto, Akiko
    Takasaki, Hideki
    Naito, Hiroyoshi
    Inoue, Naohisa
    Shinku/Journal of the Vacuum Society of Japan, 1999, 42 (03): : 253 - 256
  • [27] MBE GROWTH AND AL DOPING OF CDTE-FILMS ON GAAS
    WOOD, CEC
    ASHENFORD, DE
    JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 313 - 313
  • [28] OPTIMIZATION OF SN DOPING IN GAALAS/GAAS DH LASERS GROWN BY MBE
    STAGG, JP
    HULYER, PJ
    FOXON, CT
    ASHENFORD, D
    JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 377 - 382
  • [29] MG-DOPING TRANSIENTS DURING METALORGANIC VAPOR-PHASE EPITAXY OF GAAS AND ALGAINP
    KONDO, M
    ANAYAMA, C
    SEKIGUCHI, H
    TANAHASHI, T
    JOURNAL OF CRYSTAL GROWTH, 1994, 141 (1-2) : 1 - 10
  • [30] GaAs surface passivation with MBE grown GaS thin film
    Okamoto, N
    Hara, N
    Yokoyama, M
    Tanaka, H
    COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 139 - 142