Misorientation dependence of energies of Si(001) twist grain boundaries

被引：8
|
作者：
Otsuki, A [1 ]
机构：
[1] Kyoto Univ, Inst Adv Energy, Kyoto 6110011, Japan
来源：
INTERFACE SCIENCE | 2001年 / 9卷 / 3-4期
关键词：
Si; twist boundaries; energies;
D O I：
10.1023/A:1015119114079
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The energies of Si(001) twist boundaries have been measured relative to Si(solid)-Sn(liquid) interfacial energies by a dihedral angle method at 1473 K. Shallow and wide width energy cusps were found at non-coincidence site lattice (csl)-misorientations, in addition to shallow and narrow width energy cusps at csl-misorientations with low Sigma. These wide width cusps existed at misorientations dividing, into 1:1 or 1:2, misorientation differences between two csl-misorientations. The energy of the general boundaries discontinuously varied with misorientations across the wide cusps. These misorientations divided the whole misorientation region with respect to energies.
引用
收藏
页码：293 / 296
页数：4
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