Optical and micro-structural properties of ZnO thin films grown on silicon substrate by pulsed laser deposition

被引：0

作者：

He, JT ^{[1
]}

Zhuang, HZ ^{[1
]}

Xue, CS ^{[1
]}

Tian, DS ^{[1
]}

Wu, YX ^{[1
]}

Xue, SB ^{[1
]}

Hu, HJ ^{[1
]}

机构：

[1] Shandong Normal Univ, Coll Phys & Elect, Inst Semicond, Jinan 250014, Peoples R China

来源：

JOURNAL OF RARE EARTHS | 2006年 / 24卷

关键词：

PLD; ZnO; substrate temperature; oxygen pressure;

D O I：

暂无

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

ZnO thin films were deposited on n-Si (111) at various substrate temperatures and oxygen pressures by pulsed laser deposition (PLD) using a Nd:YAG laser with the wavelength of 1064 nm. X-ray diffraction (XRD), photoluminescence (PL), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to analyze the microstructure, optical property and morphology of the ZnO thin films. A comparatively optimal crystallized ZnO thin film was obtained at the substrate temperature of 600 degrees C in oxygen pressure of 50 mTorr. The intensity of the luminescence strongly depends on the stoichiometry of the film as well as the crystalline quality.

引用

页码：26 / 28

页数：3

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