Electrical characterization of silicon dioxide thin film prepared by ArF excimer laser chemical vapor deposition from silicon tetraacetate

Silicon dioxide thin films were prepared by low-pressure direct photochemical vapor deposition (CVD) using an ArF excimer laser. A comparison of the relative dielectric constant and dielectric tangent indicated that laser-CVD was effective in lowering the substrate temperature from 200-300 degrees C to room temperature. Moreover, the capacitance-voltage curves of metal-oxide-semiconductor structure exhibited no significant hysteresis, indicating that the laser-CVD-prepared SiO2 films contained a lower concentration of mobile-ion charges compared to the films prepared by thermal decomposition of silicon tetraacetate without laser irradiation.