PSPICE analysis of a scanning capacitance microscope sensor

被引：4
|
作者：
Buh, GH [1 ]
Tran, C
Kopanski, JJ
机构：
[1] Natl Inst Stand & Technol, Div Semicond Elect, Gaithersburg, MD 20899 USA
[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 01期
关键词：
D O I：
10.1116/1.1631290
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A detailed analysis of the capacitance sensor from a scanning capacitance microscope (SCM) is presented. PSPICE circuit simulations are compared with experimental results. The general behavior of the SCM sensor and practical aspects of the sensor-tuning curve are described. It is found that stray capacitances of the magnitude encountered in a conventional SCM measurement configuration are large enough to significantly decrease measurement sensitivity and sensor high-frequency voltage across the tip sample. We have also calculated and measured the delocalized dC/dV caused by stray capacitance, revealing that this background dC/dV must be accounted for in order to obtain the true localized dC/dV. (C) 2004 American Vacuum Society.
引用
收藏
页码：417 / 421
页数：5
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