Measurements of AlGaN/GaN heterostructures for sensor applications

被引：0
|
作者：
Hojko, Mikolaj Ryszard [1 ]
Paszuk, Dorota [1 ]
Paszkiewicz, Bogdan [1 ]
机构：
[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland
来源：
OPTICA APPLICATA | 2013年 / 43卷 / 01期
关键词：
sensor; AlGaN/GaN heterostructure; electrolyte; two-dimensional electron gas (2DEG); pH;
D O I：
10.5277/oa130104
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In the paper, the behavior of AlGaN/GaN HEMT-type heterostructures in a water solution of (KOH + HCl) with differing pH was studied. The influence of the electrolyte pH on channel pinch-off voltage was measured using impedance spectroscopy methods. It was observed that the change of the pH of electrolyte has a strong effect on the pinch-off voltage of AlGaN/GaN HEMT-type heterostructures independently of the concentration of other ions. In high-pH environment the so-called memory effect of heterostructures was revealed. Its possible origin was discussed. A general theory to explain all results was proposed.
引用
收藏
页码：35 / 38
页数：4
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