Dual-wavelength monolithic Y-branch distributed Bragg reflection diode laser at 671 nm suitable for shifted excitation Raman difference spectroscopy

被引：29

作者：

Maiwald, Martin ^{[1
]}

Fricke, Joerg ^{[1
]}

Ginolas, Arnim ^{[1
]}

Pohl, Johannes ^{[1
]}

Sumpf, Bernd ^{[1
]}

Erbert, Goetz ^{[1
]}

Traenkle, Guenther ^{[1
]}

机构：

[1] Ferdinand Braun Inst, Leibniz Inst Hochstfrequenztech, D-12489 Berlin, Germany

来源：

LASER & PHOTONICS REVIEWS | 2013年 / 7卷 / 04期

关键词：

Diode laser; distributed Bragg reflector (DBR); 671nm; Y-branch; Raman spectroscopy; shifted excitation Raman difference spectroscopy; SERDS; FLUORESCENCE REJECTION; SENSOR;

D O I：

10.1002/lpor.201300041

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A dual-wavelength monolithic Y-branch distributed Bragg reflection (DBR) diode laser at 671 nm is presented. The device is realized with deeply etched surface DBR gratings by one-step epitaxy. A maximum optical output power of 110 mW is obtained in cw-operation for each laser cavity. The emission wavelengths of the device are 670.5 nm and 671.0 nm with a spectral width of 13 pm (0.3 cm-1) and a mean spectral distance of 0.46 nm (10.2 cm-1) over the whole operating range. Together with a free running power stability of +/- 1.1% this most compact diode laser is ideally suited as an excitation light source for portable shifted excitation Raman difference spectroscopy (SERDS).

引用

收藏

页码：L30 / L33

页数：4

相关论文

共 16 条

[1] 96 mW longitudinal single mode red-emitting distributed Bragg reflector ridge waveguide laser with tenth order surface gratings [J].

Feise, D. ;

John, W. ;

Bugge, F. ;

Blume, G. ;

Hassoun, T. ;

Fricke, J. ;

Paschke, K. ;

Erbert, G. .

OPTICS LETTERS, 2012, 37 (09) :1532-1534

[2] Y-branch coupled DFB-lasers based on high-order Bragg gratings for wavelength stabilization [J].

Fricke, J. ;

Klehr, A. ;

Brox, O. ;

John, W. ;

Ginolas, A. ;

Ressel, P. ;

Weixelbaum, L. ;

Erbert, G. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 28 (03)

[3] Properties and fabrication of high-order Bragg gratings for wavelength stabilization of diode lasers [J].

Fricke, J. ;

John, W. ;

Klehr, A. ;

Ressel, P. ;

Weixelbaum, L. ;

Wenzel, H. ;

Erbert, G. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (05)

[4] THE Y-LASER - A MULTIFUNCTIONAL DEVICE FOR OPTICAL COMMUNICATION-SYSTEMS AND SWITCHING-NETWORKS [J].

HILDEBRAND, O ;

SCHILLING, M ;

BAUMS, D ;

IDLER, W ;

DUTTING, K ;

LAUBE, G ;

WUNSTEL, K .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1993, 11 (12) :2066-2075

[5] PHOTONIC INTEGRATED-CIRCUIT COMBINING 2 GAAS DISTRIBUTED BRAGG REFLECTOR LASER-DIODES FOR GENERATION OF THE BEAT SIGNAL [J].

MAEDA, M ;

HIRATA, T ;

SUEHIRO, M ;

HIHARA, M ;

YAMAGUCHI, A ;

HOSOMATSU, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (2B) :L183-L185

[6] Microsystem 671 nm light source for shifted excitation Raman difference spectroscopy [J].

Maiwald, Martin ;

Schmidt, Heinar ;

Sumpf, Bernd ;

Erbert, Goetz ;

Kronfeldt, Heinz-Detlef ;

Traenkle, Guenther .

APPLIED OPTICS, 2009, 48 (15) :2789-2792

[7] FLUORESCENCE REJECTION IN RAMAN-SPECTROSCOPY BY SHIFTED-SPECTRA, EDGE-DETECTION, AND FFT FILTERING TECHNIQUES [J].

MOSIERBOSS, PA ;

LIEBERMAN, SH ;

NEWBERY, R .

APPLIED SPECTROSCOPY, 1995, 49 (05) :630-638

[8] Y-branch surface-etched distributed bragg reflector lasers at 850 nm for optical heterodyning [J].

Price, R. K. ;

Verma, V. B. ;

Tobin, K. E. ;

Elarde, V. C. ;

Coleman, J. J. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (17-20) :1610-1612

[9] Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers [J].

Ressel, P ;

Erbert, G ;

Zeimer, U ;

Häusler, K ;

Beister, G ;

Sumpf, B ;

Klehr, A ;

Tränkle, G .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (05) :962-964

[10] A Prototype Hand-Held Raman Sensor for the in Situ Characterization of Meat Quality [J].

Schmidt, Heinar ;

Sowoidnich, Kay ;

Kronfeldt, Heinz-Detlef .

APPLIED SPECTROSCOPY, 2010, 64 (08) :888-894