Investigation of the optical and electrical properties of p-type porous GaAs structure

被引：14
作者：
Saghrouni, H. [1 ]
Missaoui, A. [2 ]
Hannachi, R. [1 ,2 ]
Beji, L. [1 ,2 ]
机构：
[1] Univ Sousse, Lab Energie Mat, Ecole Super Sci & Technol, Hammam Sousse, Tunisia
[2] Univ Sousse, Equipe Rech Caracterisat Optoelect & Spect Mat &, Hammam Sousse, Tunisia
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2013年 / 64卷
关键词：
Porous GaAs; Electrochemical etching; X-ray diffraction; Atomic force microscopy; Photoluminescence; Ellipsometry; Metal-semiconductor; Electrical measurement; SCHOTTKY-BARRIER DIODES; VOLTAGE CHARACTERISTICS; GAUSSIAN DISTRIBUTION; METAL-SEMICONDUCTOR; PHOTOLUMINESCENCE; MORPHOLOGY; CONTACTS; HEIGHT; FABRICATION; CAPACITANCE;
D O I：
10.1016/j.spmi.2013.10.007
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Porous GaAs layers have been formed by electrochemical anodic etching of (1 0 0) heavily doped p-type GaAs substrate in a HF:C2H5-OH solution. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). Nano-structural nature of the porous layer has been demonstrated by X-ray diffraction analysis (XRD) and confirmed by AFM. An estimation of the main size of the GaAs crystallites obtained from effective mass theory and based on PL data was close to the lowest value obtained from the AFM results. The porous p-GaAs samples are characterised by spectroscopic ellipsometry and modulation spectroscopy techniques. The objective of this study is to determine the porosity, refractive index, and thickness. The porosity of GaAs determined by atomic force microscopy confirmed by the value obtained from the spectroscopic ellipsometry. In fact the current voltage I(V) characteristics of metal semiconductor Au/p-GaAs are investigated and compared with Au/p-porous GaAs structures. From the forward bias I(V) characteristics of these devices, the main electrical parameters such as ideality factor, barrier height, and series resistance have been determined. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：507 / 517
页数：11
相关论文
共 39 条
[1]   Gaussian distribution of inhomogeneous barrier height in Ag/p-Si (100) Schottky barrier diodes [J].
Acar, S ;
Karadeniz, S ;
Tugluoglu, N ;
Selçuk, AB ;
Kasap, M .
APPLIED SURFACE SCIENCE, 2004, 233 (1-4) :373-381
[2]   Formation of Porous GaAs by Pulsed Current Electrochemical Anodization: SEM, XRD, Raman, and Photoluminescence Studies [J].
Ali, N. K. ;
Hashim, M. R. ;
Aziz, A. Abdul ;
Abu Hassan, H. ;
Ismail, J. .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (03) :K9-K13
[3]  
Araki H., 1989, RIGAKU J, V6, P34
[4]   OPTICAL-PROPERTIES OF ANODICALLY GROWN NATIVE OXIDES ON SOME GA-V COMPOUNDS FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
SCHWARTZ, B ;
STUDNA, AA ;
DERICK, L ;
KOSZI, LA .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3510-3513
[5]   DC and AC electrical characteristics of porous GaAs/p+-GaAs heterostructure [J].
Beji, L ;
Ben Jomaa, T ;
Harrabi, Z ;
Laribi, A ;
Missaoui, A ;
Bouazizi, A .
VACUUM, 2006, 80 (05) :480-487
[6]   Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution [J].
Beji, L ;
Sfaxi, L ;
Ismail, B ;
Zghal, S ;
Hassen, F ;
Maaref, H .
MICROELECTRONICS JOURNAL, 2003, 34 (10) :969-974
[7]   Critical layer thickness enhancement of InAs overgrowth on porous GaAs [J].
Beji, L ;
Ismail, B ;
Sfaxi, L ;
Hassen, F ;
Maaref, H ;
Ben Ouada, H .
JOURNAL OF CRYSTAL GROWTH, 2003, 258 (1-2) :84-88
[8]   Comparative I(V) study of pure Schottky contacts used in spin-LEDs [J].
Bobo, JF ;
Couderc, S ;
Arnoult, A ;
Fontaine, C ;
Mamy, R .
SOLID-STATE ELECTRONICS, 2004, 48 (05) :845-849
[9]   ELECTRON ELECTRON AND ELECTRON-HOLE INTERACTIONS IN SMALL SEMICONDUCTOR CRYSTALLITES - THE SIZE DEPENDENCE OF THE LOWEST EXCITED ELECTRONIC STATE [J].
BRUS, LE .
JOURNAL OF CHEMICAL PHYSICS, 1984, 80 (09) :4403-4409
[10]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
1234