Si:2p core-level photoexcitation and photoionization of organosilicon molecules

被引：2

作者：

Nagaoka, S

Fujibuchi, T

Nagashima, U

Kato, S

Takano, K

Koyano, I

机构：

[1] OCHANOMIZU UNIV, FAC SCI, BUNKYO KU, TOKYO 112, JAPAN

[2] HIMEJI INST TECHNOL, FAC SCI, DEPT MAT SCI, KAMIGORI, HYOGO 67812, JAPAN

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1996年 / 79卷

关键词：

ration during the early research stages. S.N. and T.F. thank Professor Kazuo Mukai of Ehime University for his continuous encouragement. This work was partly supported by the Joint Studies Program of tile Institute for Molecular Science (IMS). S.N; K.T. and U.N. thank the Computer Center of IMS for the use of the IBM SP2; NEC SX-3/34R and HSP computer and the Library Program GAMESS;

D O I：

10.1016/0368-2048(96)02904-0

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

By means of synchrotron radiation and ab initio calculations, we have investigated Si:2p core-level photoexcitation and photoionization of organosilicon molecules that are interesting from the viewpoint of site-specific excitation and fragmentation. The site-specific excitation and fragmentation are not clearly observed in molecules in which two Si atoms are placed in a similar chemical environment surrounding them or situated relatively closely to each other. From the calculated results, it is suggested that, in molecules containing an Si-Si bond, there is a low-lying state in which the electron distribution is localized around the Si-Si bond.

引用

页码：499 / 502

页数：4

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