Electron exchange between impurity centers of tin in lead chalcogenides

被引：2

作者：

Marchenko, A. V. ^{[1
]}

Zhilina, D. V. ^{[2
]}

Bobokhuzhaev, K. U. ^{[3
]}

Nikolaeva, A. V. ^{[1
]}

Terukov, E. I. ^{[2
]}

Seregin, P. P. ^{[1
]}

机构：

[1] Herzen State Pedag Univ Russia, St Petersburg 191186, Russia

[2] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Natl Univ Uzbekistan, VUZ Gorodok, Tashkent 700174, Uzbekistan

来源：

PHYSICS OF THE SOLID STATE | 2015年 / 57卷 / 10期

关键词：

NEGATIVE-U PROPERTIES; 2-ELECTRON; MOSSBAUER; SILICON; DEFECTS; ENERGY; ZINC;

D O I：

10.1134/S1063783415100182

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electron exchange between neutral and doubly ionized U-minus centers of tin in partially compensated solid solutions Pb0.96Sn0.02Na0.01Tl0.01S, Pb0.99Sn0.005Na0.005S, Pb0.965Sn0.015Na0.01Tl0.01Se, and Pb0.988Sn0.005Na0.007Se has been investigated using (119mm) Sn((119m) Sn) emission Mossbauer spectroscopy. The activation energy of the process for PbS-based solid solutions is 0.11(2) eV and is comparable to the depth of energy levels of tin in the PbS band gap, while the activation energy of this process for PbSe-based solid solutions is comparable to the activation energy of donor U-minus centers of tin in PbSe being 0.05(1) eV. The exchange has been performed by the simultaneous transfer of two electrons with the use of the valence band states.

引用

页码：1978 / 1983

页数：6

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