Ion-beam assisted deposition of thin molybdenum films studied by molecular dynamics simulation

We report results obtained by molecular dynamics simulation of low energy ar on-ion assisted growth of thin molybdenum films (approximate to 20 Angstrom). The effects of a single ion impact are discussed, but more particularly we consider film growth from a manufacturing viewpoint and examine the properties of the completed films. Results for ion-beam assisted deposition are compared with those for unassisted growth (i.e. physical vapor deposition). Surface orientation, atomic displacements, surface roughness, sputtering, point defects, and the influence of off-normal atom incidence are discussed.