Topological phase transition in bulk materials described by the coherent potential approximation technique

被引:9
作者
Chadov, Stanislav [1 ]
Kiss, Janos [1 ]
Kuebler, Juergen [2 ]
Felser, Claudia [1 ]
机构
[1] Max Planck Inst Chem Phys Fester Stoffe, D-01187 Dresden, Germany
[2] Tech Univ Darmstadt, Inst Festkorperphys, D-64289 Darmstadt, Germany
来源
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2013年 / 7卷 / 1-2期
关键词
topological insulators; random disorder; electron localization; coherent potential approximation; CONSISTENT CLUSTER CPA; HGTE QUANTUM-WELLS; DISORDERED ALLOYS; INSULATORS; STATE;
D O I
10.1002/pssr.201206395
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We consider the analogy between the topological phase transition which occurs on a surface of a non-trivial insulator as a function of spatial coordinate, and the phase transition occurring in the bulk due to the change of internal parameters (such as crystal field and spin-orbit coupling). In both cases the system exhibits a Dirac cone, which is the universal manifestation of a topological phase transition, independent of the type of the driving parameters. In particular, this leads to a simple way of determining the topological class - based solely on the bulk information - even for systems where the translational symmetry is broken by atomic disorder or by strong electron correlations. Here we demonstrate this idea, using as an example the zinc-blende related semiconductors by means of ab-initio fully-relativistic band structure calculations, involving the technique of coherent potential approximation (CPA). (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:82 / 89
页数:8
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