An Analytical Model of SiGe Heterojunction Bipolar Transistors on SOI Substrate for Large Current Situations

被引：1

作者：

Xu Xiao-Bo ^{[1
]}

Zhang Bin ^{[2
]}

Yang Yin-Tang ^{[2
]}

Li Yue-Jin ^{[2
]}

机构：

[1] Changan Univ, Sch Elect & Control Engn, Rd Traff Detect & Equipment Engn Res Ctr, Xian 710064, Peoples R China

[2] Xidian Univ, Sch Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian 710071, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2013年 / 30卷 / 02期

关键词：

QUASI-SATURATION; TECHNOLOGY;

D O I：

10.1088/0256-307X/30/2/028502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The large current effect of silicon germanium heterojunction bipolar transistors fabricated on thin silicon-on-insulator is included in the model. As the current is two-dimensional, the injection for large current is vertical plus horizontal and is quite different from that of the bulk device. Critical parameters modeling the large current, such as the collector injection width, the hole density and the corresponding potential in the injection region, are discussed, and the influence to the transit time is also analyzed.

引用

页数：4

共 50 条

[31] Effect of Ge Profiles on the Performance of Lateral SiGe Heterojunction Bipolar Transistors with Substrate Bias
Jin, Dongyue
Wu, Ling
Zhang, Wanrong
Guo, Bin
Yang, Shaomeng
Sun, Sheng
SIXTH SYMPOSIUM ON NOVEL OPTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATIONS, 2020, 11455
[32] A unified analytical model for charge transport in Heterojunction Bipolar Transistors
Reddy, KV
DasGupta, A
SOLID-STATE ELECTRONICS, 2004, 48 (09) : 1613 - 1622
[33] Collector-up SiGe heterojunction bipolar transistors
Gruhle, A
Kibbel, H
Mähner, C
Mroczek, W
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (07) : 1510 - 1513
[34] Implementing SiGe technology to produce heterojunction bipolar transistors
University of Maine, Orono, ME, United States
不详
不详
MICRO, 2001, 19 (07): : 31 - 42
[35] Development on SiGe/Si film heterojunction bipolar transistors
Guo, L
Li, KC
Liu, DG
Zhang, J
Yi, Q
d'Avitaya, FA
Xu, SL
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2000, 4086 : 236 - 239
[36] DESIGN ISSUES FOR SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS
STORK, JMC
PATTON, GL
CRABBE, EF
HARAME, DL
MEYERSON, BS
IYER, SS
GANIN, E
PROCEEDINGS OF THE 1989 BIPOLAR CIRCUITS AND TECHNOLOGY MEETING, 1989, : 57 - 64
[37] Materials and technology issues for SiGe heterojunction bipolar transistors
Ashburn, P
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2001, 4 (06) : 521 - 527
[38] BiCMOS integration of SiGe:C heterojunction bipolar transistors
Knoll, D
Heinemann, B
Ehwald, KE
Rücker, H
Tillack, B
Winkler, W
Schley, P
PROCEEDINGS OF THE 2002 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2002, : 162 - 166
[39] Reliability of microwave SiGe/Si heterojunction bipolar transistors
Ma, ZQ
Bhattacharya, P
Rieh, JS
Ponchak, GE
Alterovitz, SA
Croke, ET
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2001, 11 (10) : 401 - 403
[40] SiGe heterojunction bipolar transistors: The first ten years
Stork, J.M.C.

← 1 2 3 4 5 →