An Analytical Model of SiGe Heterojunction Bipolar Transistors on SOI Substrate for Large Current Situations

被引：1

作者：

Xu Xiao-Bo ^{[1
]}

Zhang Bin ^{[2
]}

Yang Yin-Tang ^{[2
]}

Li Yue-Jin ^{[2
]}

机构：

[1] Changan Univ, Sch Elect & Control Engn, Rd Traff Detect & Equipment Engn Res Ctr, Xian 710064, Peoples R China

[2] Xidian Univ, Sch Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian 710071, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2013年 / 30卷 / 02期

关键词：

QUASI-SATURATION; TECHNOLOGY;

D O I：

10.1088/0256-307X/30/2/028502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The large current effect of silicon germanium heterojunction bipolar transistors fabricated on thin silicon-on-insulator is included in the model. As the current is two-dimensional, the injection for large current is vertical plus horizontal and is quite different from that of the bulk device. Critical parameters modeling the large current, such as the collector injection width, the hole density and the corresponding potential in the injection region, are discussed, and the influence to the transit time is also analyzed.

引用

页数：4

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