One-Step Synthesis and Sintering of MgB2 by Spark Plasma Sintering

We have studied the one-step procedure for simultaneous synthesis and sintering of SiC-doped MgB2 by the spark plasma sintering technique. Two types of composition, one in which Mg is strongly deficient, with the atomic ratio , and one in which Mg content is slightly higher than the stoichiometric value, specifically , were investigated. The amount of SiC was 12 wt.% and 9 wt.%, respectively. For comparison we also studied the way the deficit of Mg can be compensated in a second process of sintering. The sample with Mg deficit shows that SiC is left almost unreacted but the results are spectacular: the highest critical temperature, 36.5 K, the highest upper critical field and the highest self-field critical current density 6.7x10(5) A/cm(2) at 10 K. In the sample with overstoichiometric Mg, SiC is decomposed, carbon diffuses within MgB2 but the critical temperature is only of 35.8 K and the zero-field critical current density is one order of magnitude lower. The compensation of the deficit of Mg in the two-step procedure is not efficient. The critical temperature is even lower, 35.8 K, the upper critical field is also lower despite SiC decomposition and C diffusion within MgB2 and the critical current density is slightly above 10(5) A/cm(2). However, at low temperatures and fields of order 7 T the sample with overstoichiometric Mg and the sample prepared by the two-step procedure have higher critical current density.