Irradiating diamond: Aspects of defect generation, accumulation and annealing

被引：1

作者：

Prins, JF ^{[1
]}

机构：

[1] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, Gauteng, South Africa

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2001年 / 156卷 / 1-4期

关键词：

diamond; diffusion; activation energies; radiation damage; ion implantation; point defects;

D O I：

10.1080/10420150108216890

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

It is postulated that for diamond the activation barrier E-c that a diffusing point defect has to scale before being trapped, is in general larger than the activation barriers E-D that it has to scale during diffusion. By taking this into account, one can explain why the residual damage decreases with increasing target temperature during ion implantation, and why vacancies seem to diffuse "uphill" while being attracted by A-centres in electron irradiated type la-A diamonds. The general applicability of this model indicates strongly that the defects formed during ion implantation of diamond are, as in the case of electron-irradiation, primarily individual vacancies and interstitial atoms. Recent results on the properties of interstitials in diamond also give credence to the latter conclusion as well as the postulates on which the Cold-Implantation-Rapid-Annealing (CIRA) routine for ion-beam doping of diamond is based.

引用

页码：173 / 179

页数：7

共 50 条

[31] Instantaneous annealing of CVD diamond during high dose-rate ion implantation [J].

Kalish, R ;

Uzan-Saguy, C ;

Ran, B ;

Ferber, H ;

Guettler, H ;

Zachai, R .

[32] Damage accumulation in diamond during ion implantation [J].

Khmelnitsky, Roman A. ;

Dravin, Valeriy A. ;

Tal, Alexey A. ;

Zavedeev, Evgeniy V. ;

Khomich, Andrey A. ;

Khomich, Alexander V. ;

Alekseev, Alexander A. ;

Terentiev, Sergey A. .

JOURNAL OF MATERIALS RESEARCH, 2015, 30 (09) :1583-1592

[33] Impurity-assisted annealing of point defect complexes in ion-implanted silicon [J].

Pellegrino, P ;

Kuznetsov, AY ;

Svensson, BG .

PHYSICA B-CONDENSED MATTER, 1999, 273-4 :489-492

[34] High-pressure and high-temperature annealing effects of boron-implanted diamond [J].

Ueda, K. ;

Kasu, M. .

[35] Fabrication of graphitic layers in diamond using FIB implantation and high pressure high temperature annealing [J].

Rubanov, S. ;

Suvorova, A. ;

Popov, V. P. ;

Kalinin, A. A. ;

Pal'yanov, Yu. N. .

[36] Variation in atomistic structure due to annealing at diamond/silicon heterointerfaces fabricated by surface activated bonding [J].

Ohno, Yutaka ;

Liang, Jianbo ;

Yoshida, Hideto ;

Shimizu, Yasuo ;

Nagai, Yasuyoshi ;

Shigekawa, Naoteru .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (SF)

[37] Optical, electrical and microstructural properties of nanocomposite Ag/diamond by Ag ion implantation and subsequent annealing [J].

Shen, Yanyan ;

Qi, Ting ;

Qiao, Yu ;

Hei, Hongjun ;

He, Zhiyong ;

Yu, Shengwang .

VACUUM, 2016, 123 :160-166

[38] Annealing Time Dependence on Creation of SiV, GeV, and SnV in Diamond by Atmospheric Annealing at 1800 °C [J].

Baba, Tomoya ;

Iizawa, Masatomi ;

Takenaka, Kouta ;

Kimura, Kosuke ;

Kawasaki, Airi ;

Taniguchi, Takashi ;

Miyakawa, Masashi ;

Okazaki, Hiroyuki ;

Hanaizumi, Osamu ;

Onoda, Shinobu .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2025, 222 (05)

[39] The vacancy-hydrogen defect in diamond: A computational study [J].

Peaker, C. V. ;

Goss, J. P. ;

Briddon, P. R. ;

Horsfall, A. B. ;

Rayson, M. J. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 212 (11) :2431-2436

[40] Depth dependence of defect evolution and TED during annealing [J].

Colombeau, B ;

Cowern, NEB ;

Cristiano, F ;

Calvo, P ;

Lamrani, Y ;

Cherkashin, N ;

Lampin, E ;

Claverie, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 216 :90-94

← 1 2 3 4 5 →