Fermi-level depinning in metal/Ge Schottky junction and its application to metal source/drain GeNMOSFET

被引：0

作者：

Kobayashi, Masaharu ^{[1
]}

Kinoshita, Atsuhiro ^{[1
]}

Saraswat, Krishna ^{[1
]}

Wong, H. -S. Philip ^{[1
]}

Nishi, Yoshio ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

2008 SYMPOSIUM ON VLSI TECHNOLOGY | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We successfully demonstrated Schottky barrier height modulation in metal/Ge Schottky junction by inserting an ultrathin interfacial SiN layer. The SiN layer suppressed strong Fermi level pinning in metal/Ge junction, which resulted in effective control of the Schottky barrier height. We systematically investigated its physics, for the first time, and almost zero Schottky barrier height was successfully obtained for electrons. We applied this technology to metal source/drain Ge NMOSFET and achieved low source/drain resistance.

引用

页码：43 / 44

页数：2

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