Design of class-E GaN HEMT power amplifier using elliptic low pass matching network with 86% efficiency

被引：8
|
作者：
Kizilbey, Oguzhan [1 ]
机构：
[1] Tubitak Bilgem, Sci & Technol Res Council Turkey, TR-41470 Gebze, Kocaeli, Turkey
来源：
IEICE ELECTRONICS EXPRESS | 2013年 / 10卷 / 02期
关键词：
GaN HEMT; high efficiency; power amplifier;
D O I：
10.1587/elex.10.20120960
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a highly efficient prototype of Gallium Nitride high electron mobility transistor (GaN HEMT) power amplifier using elliptic low pass filter output network is proposed, fabricated and measured. A fifth-order elliptic low-pass filter network is designed and implemented for the output matching, which provides optimized fundamental and harmonic impedances. Simulation and experimental results show that a Class-E PA is realized from 2.7 to 2.9 GHz with 10-W (40 dBm) output power, 10 dB gain and a measured efficiency of 86%, which is the highest reported today for such a frequency band and output power.
引用
收藏
页数：6
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