Extended defect system as a main source of non-radiative recombination in InGaN/GaN LEDs

被引：17

作者：

Shabunina, Evgeniia ^{[1
]}

Averkiev, Nikita ^{[1
]}

Chernyakov, Anton ^{[1
]}

Levinshtein, Michael ^{[1
]}

Petrov, Pavel ^{[1
]}

Shmidt, Natalia ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3 | 2013年 / 10卷 / 03期

关键词：

InGaN/GaN; LEDs; efficiency droop; degradation; GAN; EFFICIENCY;

D O I：

10.1002/pssc.201200656

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of low-frequency noise study of three sets of LEDs classified for their low voltage leakage current (LC) values are reported. The LC values at 1-2.5 V integrally characterize electrical properties of extended defect system (EDS) that is typical for InGaN/GaN structures. The lower LC value, the smaller concentration of extended defects is. It has been shown that low-frequency noise peculiarities such as the shape of current dependences of the noise spectral density (SI) and increase in SI with an LC values growth are caused by EDS presence. The point defects (PD) contribution to non-radiative recombination processes is observed in current density region 10(-2) - 10 A/cm(2) where radiative recombination prevails. The non-radiative caused by EDS at j < 10(-2) A/cm(2) and at j > 10 A/cm(2). The complicated behavior of EDS with an injection current change has been observed. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：335 / 337

页数：3

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