Characterization of microvoids in thin hydrogenated amorphous silicon layers by spectroscopic ellipsometry and Fourier transform infrared spectroscopy

被引：16
|
作者：
Liu, Wenzhu [1 ,3 ]
Zhang, Liping [1 ]
Meng, Fanying [1 ]
Guo, Wanwu [2 ]
Bao, Jian [2 ]
Liu, Jinning [1 ]
Wang, Dongliang [2 ]
Liu, Zhengxin [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R China
[2] Trinasolar, State Key Lab PV Sci & Technol SKL PVST, Changzhou 213031, Jiangsu, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
SCRIPTA MATERIALIA | 2015年 / 107卷
基金：
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词：
Hydrogenated amorphous silicon; Microvoids; Silicon heterojunction solar cell; Surface passivation; A-SI-H; X-RAY-SCATTERING; MOLECULAR H-2; SOLAR-CELLS; FILMS; INTERFACE; DENSITY; GROWTH;
D O I：
10.1016/j.scriptamat.2015.05.018
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Microstructures of voids in a-Si:H layers on the surface of c-Si wafers were quantitatively analyzed by combining spectroscopic ellipsometry and Fourier transform infrared spectroscopy. A diameter (D) from 0.52 to 2.11 nm and a number density (N-voids) from 8.4 x 10(18) to 5.4 x 10(20) cm(-3) were estimated. It was demonstrated large-size voids were formed owing to the network relaxation caused by H+ etching. Measurements of the minority carrier lifetime revealed both D and N-voids affect the passivation performance for a c-Si surface. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：50 / 53
页数：4
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