Design and simulation of a nanoelectronic single-electron Control - Not gate

被引：9

作者：

Zardalidis, GT ^{[1
]}

Karafyllidis, I ^{[1
]}

机构：

[1] Democritus Univ Thrace, Dept Elect & Comp Engn, GR-67100 Xanthi, Greece

来源：

MICROELECTRONICS JOURNAL | 2006年 / 37卷 / 02期

关键词：

single-electron circuits; nanoelectronics; Control-Not gate;

D O I：

10.1016/j.mejo.2005.04.049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A nanoelectronic single-electron Control-Not gate is presented in this paper. Bits of information are represented by the presence or absence of single electrons at conducting islands. The logic operation of the gate is verified using simulation, whereas the stability of its operation is analyzed using Monte-Carlo method. (C) 2005 Elsevier Ltd. All rights reserved.

引用

页码：94 / 97

页数：4

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