An AlGaN/GaN HEMT-based microstrip MMIC process for advanced transceiver design

被引：51
|
作者：
Sudow, Mattias [1 ]
Fagerlind, Martin [1 ]
Thorsell, Mattias [1 ]
Andersson, Kristoffer [1 ]
Billstrom, Niklas [2 ]
Nilsson, Per-Ake [1 ]
Rorsman, Niklas [1 ]
机构：
[1] Chalmers Univ Technol, Microwave Elect Lab, SE-41296 Gothenburg, Sweden
[2] Saab Microwave Syst, SE-10724 Stockholm, Sweden
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2008年 / 56卷 / 08期
关键词：
amplifier; gallium nitride (GaN); mixer; monolithic microwave integrated circuit (MMIC); switch;
D O I：
10.1109/TMTT.2008.927317
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A MMIC process in AlGaN/CaN technology for advanced transceiver design has been developed. The process is based on microstrip technology with a complete model library of passive elements and AlGaN/GaN HEMTs. The transistor technology in this process is suitable for both power and low noise design, demonstrated with a power density of 5 W/mm, and an NFmin Of 1.4 dB at X-band. Process stability of subcircuits, complementary to power amplifiers and LNAs, in a transceiver system have been investigated. The results indicate that an all AlGaN/GaN MMIC transceiver is realizable using this technology.
引用
收藏
页码：1827 / 1833
页数：7
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