An AlGaN/GaN HEMT-based microstrip MMIC process for advanced transceiver design

被引：52

作者：

Sudow, Mattias ^{[1
]}

Fagerlind, Martin ^{[1
]}

Thorsell, Mattias ^{[1
]}

Andersson, Kristoffer ^{[1
]}

Billstrom, Niklas ^{[2
]}

Nilsson, Per-Ake ^{[1
]}

Rorsman, Niklas ^{[1
]}

机构：

[1] Chalmers Univ Technol, Microwave Elect Lab, SE-41296 Gothenburg, Sweden

[2] Saab Microwave Syst, SE-10724 Stockholm, Sweden

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2008年 / 56卷 / 08期

关键词：

amplifier; gallium nitride (GaN); mixer; monolithic microwave integrated circuit (MMIC); switch;

D O I：

10.1109/TMTT.2008.927317

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A MMIC process in AlGaN/CaN technology for advanced transceiver design has been developed. The process is based on microstrip technology with a complete model library of passive elements and AlGaN/GaN HEMTs. The transistor technology in this process is suitable for both power and low noise design, demonstrated with a power density of 5 W/mm, and an NFmin Of 1.4 dB at X-band. Process stability of subcircuits, complementary to power amplifiers and LNAs, in a transceiver system have been investigated. The results indicate that an all AlGaN/GaN MMIC transceiver is realizable using this technology.

引用

页码：1827 / 1833

页数：7

共 21 条

[1] AlGaN/GaN Ka-band 5-W MMIC amplifier [J].

Darwish, Ali Mohamed ;

Boutros, K. ;

Luo, B. ;

Huebschman, Benjamin D. ;

Viveiros, E. ;

Hung, H. Alfred .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2006, 54 (12) :4456-4463

[2]

GAUTHIER G, 2005, 13 EUR GALL ARS OTH, P361

[3] AlGaN/GaN HEMTs with PAE of 53% at 35 GHz for HPA and multi-function MMIC applications [J].

Kao, Ming-Yih ;

Lee, Cathy ;

Haji, Rached ;

Saunier, Paul ;

Tserng, Hua-Quen .

2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6, 2007, :627-629

[4] Signal generation, control, and frequency conversion AlGaN/GaN HEMT MMICs [J].

Kaper, VS ;

Thompson, RM ;

Prunty, TR ;

Shealy, JR .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (01) :55-65

[5]

Kimball D, 2005, COMP SEMICOND INTEGR, P89

[6] A compact 16 watt X-band GaN-MMIC power amplifier [J].

Klockenhoff, Harald ;

Behtash, Reza ;

Wuerfl, Joachim ;

Heinrich, Wolfgang ;

Trankle, Guenther .

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, 2006, :1846-+

[7] A 2 Watt, sub-dB noise figure GaN MMIC LNA-PA amplifier with multi-octave bandwidth from 0.2-8 GHz [J].

Kobayashi, Kevin W. ;

Chen, YaoChung ;

Smorchkova, Ioulia ;

Tsai, Roger ;

Wojtowicz, Mike ;

Oki, Aaron .

2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6, 2007, :619-622

[8] Reliability evaluation of AlGaN/GaN HEMTs grown on SiC substrate [J].

Lee, C ;

Witkowski, L ;

Muir, M ;

Tserng, HQ ;

Saunier, P ;

Wang, H ;

Yang, J ;

Khan, MA .

IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2002, :436-442

[9] A GAAS-MESFET MIXER WITH VERY LOW INTERMODULATION [J].

MAAS, SA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1987, 35 (04) :425-429

[10] A MULTILINE METHOD OF NETWORK ANALYZER CALIBRATION [J].

MARKS, RB .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1991, 39 (07) :1205-1215

← 1 2 3 →