Instability of steps during Ga deposition on Si(111)

被引：14

作者：

Hibino, H. ^{[1
]}

Kageshima, H. ^{[1
]}

Uwaha, M. ^{[2
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

[2] Nagoya Univ, Dept Phys, Chikusa Ku, Nagoya, Aichi 4648602, Japan

来源：

SURFACE SCIENCE | 2008年 / 602卷 / 14期

关键词：

low-energy electron microscopy (LEEM); atomic force microscopy; surface structure; morphology; roughness; and topography; silicon; gallium; stepped single crystal surfaces;

D O I：

10.1016/j.susc.2008.05.023

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We demonstrate that deposition of foreign atoms can induce step wandering. Low-energy electron microscopy and atomic force microscopy were used to investigate step shape changes during Ga deposition on Si(1 1 1). Dramatic step wandering occurs during the root 3 x root 3-to-6.3 x 6.3 transition. Due to the difference in the Si atom density between the root 3 x root 3 and 6.3 x 6.3 structures, steps advance during the phase transition. Because the 6.3 x 6.3 structure is preferentially formed at the lower side of the steps, more Si atoms are incorporated into the steps from the lower side than from the upper side. This asymmetry causes the step wandering. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2421 / 2426

页数：6

共 21 条

[1] THE ROLE OF STEP COLLISIONS ON DIFFRACTION FROM VICINAL SURFACES [J].