Flexible Pressure Sensors Based on Silicon Nanowire Array Built by Metal-Assisted Chemical Etching

被引：13

作者：

Kim, Chihoon ^{[1
]}

Ahn, Heejo ^{[1
]}

Ji, Taeksoo ^{[1
]}

机构：

[1] Chonnam Natl Univ, Semicond Devices Lab, Dept Elect Engn, Gwangju 61186, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

Silicon; Etching; Pressure sensors; Skin; Substrates; Metals; Resistance; Pressure sensor; metal-assisted chemical etching; silicon nanowire; piezoresistance; STRAIN SENSORS; ELECTRONIC SKIN; TRANSISTORS; MATRIX;

D O I：

10.1109/LED.2020.3001977

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a flexible pressure sensor based on silicon nanowires (Si NWs) built by metal-assisted chemical (MAC) etching. The MAC etched NWs, with a height of 30 mu m and a diameter as small as 200 nm, were post-treated with polydimethylsiloxane to endow the NW sensor with elasticity and high-pressure resistance. The piezoresistance of the Si NWs varies from 1.03x10(6) to 5.3x 104 ohms as the applied pressure changes from0 to 4.5 kPa, indicating a resistance change rate of about 94%. The Si NW sensor also exhibits a fast response and recovery time as 0.3 s, it is capable of distinguishing pressure changes as lowas 0.3kPa, which isway lower than the perceivable range (10-40kPa) of human skin.

引用

页码：1233 / 1236

页数：4

共 50 条

[31] Oxidant Concentration Modulated Metal/Silicon Interface Electrical Field Mediates Metal-Assisted Chemical Etching of Silicon
Wang, Jiang
Hu, Ya
Zhao, Haichuan
Fu, Haoxin
Wang, Yachun
Huo, Chenliang
Peng, Kui-Qing
ADVANCED MATERIALS INTERFACES, 2018, 5 (23):
[32] Schottky Barrier Catalysis Mechanism in Metal-Assisted Chemical Etching of Silicon
Lai, Ruby A.
Hymel, Thomas M.
Narasimhan, Vijay K.
Cui, Yi
ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (14) : 8875 - 8879
[33] Selective electrochemical deposition of indium in-between silicon nanowire arrays fabricated by metal-assisted chemical etching
Grevtsov, Nikita
Chubenko, Eugene
Petrovich, Vladimir
Bondarenko, Vitaly
Gavrilin, Ilya
Dronov, Alexey
Gavrilov, Sergey
MATERIALIA, 2022, 21
[34] Electron transport characteristics of silicon nanowires by metal-assisted chemical etching
Qi, Yangyang
Wang, Zhen
Zhang, Mingliang
Wang, Xiaodong
Ji, An
Yang, Fuhua
AIP ADVANCES, 2014, 4 (03)
[35] Bubble-Regulated Silicon Nanowire Synthesis on Micro-Structured Surfaces by Metal-Assisted Chemical Etching
Li, Yinxiao
Duan, Chuanhua
LANGMUIR, 2015, 31 (44) : 12291 - 12299
[36] Nonlithographic Patterning and Metal-Assisted Chemical Etching for Manufacturing of Tunable Light-Emitting Silicon Nanowire Arrays
Chern, Winston
Hsu, Keng
Chun, Ik Su
de Azeredo, Bruno P.
Ahmed, Numair
Kim, Kyou-Hyun
Zuo, Jian-min
Fang, Nick
Ferreira, Placid
Li, Xiuling
NANO LETTERS, 2010, 10 (05) : 1582 - 1588
[37] Raman spectroscopy of nanostructured silicon fabricated by metal-assisted chemical etching
Iatsunskyi, Igor
Jurga, Stefan
Smyntyna, Valentyn
Pavlenko, Mykolai
Myndrul, Valeriy
Zaleska, Anastasia
OPTICAL MICRO- AND NANOMETROLOGY V, 2014, 9132
[38] Bubble Effects on Manufacturing of Silicon Nanowires by Metal-Assisted Chemical Etching
Lee, Pee-Yew
Weng, Chun-Jen
Huang, Hung Ji
Wu, Li-Yan
Lu, Guo-Hao
Liu, Chao-Feng
Chen, Cheng-You
Li, Ting-Yu
Lin, Yung-Sheng
JOURNAL OF MANUFACTURING SCIENCE AND ENGINEERING-TRANSACTIONS OF THE ASME, 2023, 145 (09):
[39] Unraveling the Morphological Evolution and Etching Kinetics of Porous Silicon Nanowires During Metal-Assisted Chemical Etching
Lester U. Vinzons
Lei Shu
SenPo Yip
Chun-Yuen Wong
Leanne L. H. Chan
Johnny C. Ho
Nanoscale Research Letters, 2017, 12
[40] 3D Spirals with Controlled Chirality Fabricated Using Metal-Assisted Chemical Etching of Silicon
Hildreth, Owen J.
Fedorov, Andrei G.
Wong, Ching Ping
ACS NANO, 2012, 6 (11) : 10004 - 10012

← 1 2 3 4 5 →