Flexible Pressure Sensors Based on Silicon Nanowire Array Built by Metal-Assisted Chemical Etching

被引：13
|
作者：
Kim, Chihoon [1 ]
Ahn, Heejo [1 ]
Ji, Taeksoo [1 ]
机构：
[1] Chonnam Natl Univ, Semicond Devices Lab, Dept Elect Engn, Gwangju 61186, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 08期
基金：
新加坡国家研究基金会;
关键词：
Silicon; Etching; Pressure sensors; Skin; Substrates; Metals; Resistance; Pressure sensor; metal-assisted chemical etching; silicon nanowire; piezoresistance; STRAIN SENSORS; ELECTRONIC SKIN; TRANSISTORS; MATRIX;
D O I：
10.1109/LED.2020.3001977
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents a flexible pressure sensor based on silicon nanowires (Si NWs) built by metal-assisted chemical (MAC) etching. The MAC etched NWs, with a height of 30 mu m and a diameter as small as 200 nm, were post-treated with polydimethylsiloxane to endow the NW sensor with elasticity and high-pressure resistance. The piezoresistance of the Si NWs varies from 1.03x10(6) to 5.3x 104 ohms as the applied pressure changes from0 to 4.5 kPa, indicating a resistance change rate of about 94%. The Si NW sensor also exhibits a fast response and recovery time as 0.3 s, it is capable of distinguishing pressure changes as lowas 0.3kPa, which isway lower than the perceivable range (10-40kPa) of human skin.
引用
收藏
页码：1233 / 1236
页数：4
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