Few-Layer Graphene Direct Deposition on Ni and Cu Foil by Cold-Wall Chemical Vapor Deposition

被引：13

作者：

Chang, Q. H. ^{[1
]}

Guo, G. L. ^{[1
]}

Wang, T. ^{[1
]}

Ji, L. C. ^{[1
]}

Huang, L. ^{[1
]}

Ling, B. ^{[2
]}

Yang, H. F. ^{[2
]}

机构：

[1] Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China

[2] Shanghai Normal Univ, Dept Chem, Shanghai 200234, Peoples R China

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2012年 / 12卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Graphene; Chemical Vapor Deposition; Ar Plasma Treatment; FILMS;

D O I：

10.1166/jnn.2012.5432

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report an alternative synthesis process, cold-wall thermal chemical vapor deposition (CVD), is replied to directly deposit single-layer and few-layer graphene films on Ar plasma treated Ni and Cu foils using CH4 as carbon source. Through optimizing the process parameters, large scale single-layer graphene grown on Ni foil is comparable to that grown on Cu foil. The graphene films were able to be transferred to other substrates such as SiO2/Si, flexible transparent PET and verified by optical microscopy, Raman microscopy and scanning electron microscopy. The sheet resistance and transmission of the transferred graphene films on PET substrate were also discussed.

引用

页码：6516 / 6520

页数：5

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