Negative capacitances in low-mobility solids

被引：80

作者：

Gommans, HHP ^{[1
]}

Kemerink, M ^{[1
]}

Janssen, RAJ ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.72.235204

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The negative capacitance as often observed at low frequencies in semiconducting devices is explained by bipolar injection in diode configuration. Numerical calculations are performed within the drift-diffusion approximation in the presence of bimolecular recombination of arbitrary strength. Scaling relations for the characteristic frequency with bias, sample dimensions, and carrier mobilities are presented in the limits of weak and strong recombination. Finally, impedance measurements conducted on a light-emitting diode and photovoltaic cell based on low-mobility organic semiconductors are modeled as a function of bias and temperature, respectively.

引用

页数：6

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