Crosslinking impact of mesoporous MSQ films used in microelectronic interconnections on mechanical properties

被引:38
作者
Ciaramella, F
Jousseaume, V
Maitrejean, S
Verdier, M
Remiat, B
Zenasni, A
Passemard, G
机构
[1] CEA, DRT, LETI, F-38054 Grenoble, France
[2] LTPCM, F-38402 St Martin Dheres, France
[3] SRMicroelectronics, F-38926 Crolles, France
关键词
mechanical properties; ULK; FTIR; nanoindentation; Crosslinking; MSQ; spin-on; low-k;
D O I
10.1016/j.tsf.2005.08.291
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Due to integrated circuit performances increase, insulator materials with dielectric constant lower than 2.4 are requested for microelectronic interconnections. Mesoporous methylsilsesquioxane (MSQ) thin films are promising candidates for this application. However, previous studies reported low mechanical properties for these materials. These properties were usually modelized using cellular solids mechanic without taking into account chemical structure. In this work, a physical model is proposed which allows predicting elastic properties with respect to the matrix crosslinking. Several ways were used to obtain MSQ layers with different porosities and matrix crosslinking. Impact of elaboration process and curing on crosslinking were investigated using FTIR analysis and spectroscopic ellipsometry. Elastic properties were determined by nanoindentation. A correlation between elastic properties and FTIR Si-O-Si contribution is observed for all the studied samples. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:124 / 129
页数:6
相关论文
共 15 条
[1]  
ANDERSON DR, 1974, INFRARED RAMAN ULTRA, P250
[2]  
Ashby M. F., 1997, CELLULAR SOLIDS STRU, DOI DOI 10.1017/CBO9781139878326
[3]   Curing process window and thermal stability of porous MSQ-based low-dielectric-constant materials [J].
Chang, SY ;
Chou, TJ ;
Lu, YC ;
Jang, SM ;
Lin, SJ ;
Liang, MS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (06) :F146-F152
[4]  
CHERAULT N, 2005, IN PRESS MICROELEC E
[5]   Challenges of back end of the line for sub 65 nm generation [J].
Fayolle, M ;
Passemard, G ;
Louveau, O ;
Fusalba, F ;
Cluzel, J .
MICROELECTRONIC ENGINEERING, 2003, 70 (2-4) :255-266
[6]  
GRILL A, 2003, J APPL PHYS, P94
[7]  
Jennett NM, 2002, MATER RES SOC SYMP P, V695, P73
[8]   Understanding CMP-induced delamination in ultra low-k/Cu integration [J].
Leduc, P ;
Savoye, M ;
Maitrejean, S ;
Scevola, D ;
Jousseaume, V ;
Passemard, G .
PROCEEDINGS OF THE IEEE 2005 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2005, :209-211
[9]   ATOMIC-STRUCTURE IN SIO2 THIN-FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].
LUCOVSKY, G ;
FITCH, JT ;
TSU, DV ;
KIM, SS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :1136-1144
[10]   Determination of elastic modulus of thin layers using nanoindentation [J].
Mencik, J ;
Munz, D ;
Quandt, E ;
Weppelmann, ER ;
Swain, MV .
JOURNAL OF MATERIALS RESEARCH, 1997, 12 (09) :2475-2484